文章摘要
李洋,周淑霞,乔瑞峰,陆海程.基于FLUENT的功率控制器IGBT模块散热设计及仿真分析[J].,2023,22(6):615-622
基于FLUENT的功率控制器IGBT模块散热设计及仿真分析
Heat dissipation design and simulation analysis of power controller IGBT module based on FLUENT
投稿时间:2022-11-11  修订日期:2022-12-29
DOI:
中文关键词: 功率控制器  IGBT模块  液冷散热  仿真模拟  温度场
英文关键词: power controller  IGBT module  liquid cooling  simulation  temperature field
基金项目:
作者单位E-mail
李洋 山东交通学院 li1203972225@126.com 
周淑霞* 山东交通学院 zhou9414@126.com 
乔瑞峰 山东交通学院  
陆海程 山东交通学院  
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中文摘要:
      IGBT 模块作为新能源电动汽车功率控制器的核心器件, 其散热效果对汽车的可靠性、 安全性有重要 的意义。 以富士电机7MBR15NF120 型IGBT 模块为研究对象, 针对高压、 大电流和高功率的功率控制器关 键模块发热源情况设计了两种功率控制器散热方式。 利用SOLIDWORKS 软件进行建模, 通过 ANSYS 仿真 软件 FLUENT 模块进行温度场和流场的耦合计算, 根据理论计算与仿真实验结果, 对功率控制器的功率损 耗和散热器的传热能力进行分析。 结果表明:S 形结构散热器模块最高温度为117.00 ℃ ,IGBT 芯片最低温 度为90.20 ℃ , 芯片均温为93.20 ℃ ; 叉排形结构散热器模块整体最高温度为133.00 ℃ ,IGBT 芯片最低温度 为101 .00 ℃ , 芯片均温为116 .50 ℃ 。 S 形结构流道的平均流速为3.600 m/s, 叉排形结构流道的平均流速为 1 .300 m/s。 S 形结构散热器比叉排形结构散热器的散热效果好, 更好地保证功率控制器的正常工作, 提高功 率控制器的可靠性。
英文摘要:
      The IGBT module is the core device of the power controller of the new energy electric vehicle. The heat dissipation effect that the IGBT module radiator can achieve is of great significance to the normal operation of the car and its reliability and safety. Taking Fujifilm7MBR15NF120IGBT module as the research object, two cooling modes of power controller are designed for the heating source ofthe key module of power controller with high voltage, high current and high power. Model was built by using SOLIDWORKS software, and coupling calculation of temperature field and flow field was carried out by FLUENT module of ANSYS simulation software. According to theoretical calculation and simulation experiment results, power loss of power controller and heat transfer capacity of radiator were analyzed. The results show that the highest temperature of the S-shaped radiator module is 117.00 ℃ , the lowest temperature of the IGBT chip is 90.20 ℃ , and the average temperature of the IGBT chip is 93.20 ℃ , both of which are lower than the overall highest temperature 133.00 ℃ of the fork-row radiator module. The lowest temperature of the IGBT chip is 101 .00 ℃ , and the average temperature is 116.50 ℃ . The average flow velocity of S-shaped channel is 3.600 m/s, higher than that of cross-row channel. It can be seen that the S-shaped radiator has better heat dissipation effect, which ensures the normal operation of the power controller and improves the reliability of the power controller.
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